RF Power Amplifier Techniques using GaAs, and GaN semiconductors

Abstract

Power amplifiers are crucially important in determining a communications system’s cost, efficiency, size, and weight. Designing high-power / high-efficiency amplifiers that satisfy the system requirements (bandwidth, linearity, spectral mask, etc.) is challenging. It involves difficult trade-offs, proper understanding of the theory, and careful attention to details. Additionally, designing, building, and testing power amplifiers usually pushes test equipment and lab components to their limits and frequently results in damage to the circuit or lab equipment. This course will examine the different aspects of this challenge with emphasis on hands-on exercises and practical tips to build power amplifiers successfully.

This course will give special attention to GaN power amplifiers, the latest arrival on the power amplifier scene.  Differences between GaN pHEMT, Si LDMOS, and GaAs MESFETs will be discussed.

Instructor

Ali Darwish, Ph. D., received his Ph.D. degree from Massachusetts Institute of Technology (MIT), Cambridge, MA, in 1996. In 1997, he co-founded Amcom Communications Inc., a leading supplier of high-power microwave amplifiers and integrated circuits. At Amcom Communications, he served as the vice president of product development, where he designed and commercialized several product lines. In May 2003 he joined a US government research lab where he conducted research on wide bandgap materials (GaN), thermal analysis of active devices, and novel MMIC concepts.

Dr. Darwish designed several state-of-the-art monolithic microwave integrated circuits (MMICs), including an X-band low phase noise oscillator, GaN mm-wave power amplifiers, SiGe mm-wave amplifiers, broadband high power amplifiers (in the L-, S-, X-, Ku-, and Ka-band), mixers, digital attenuator, and phase shifters. Dr. Darwish is an associate editor of IEEE Microwave Magazine and an adjunct faculty member with Johns Hopkins University. He is an IEEE Senior Member and an active member of MTT-S. His areas of expertise include novel techniques in millimeter-wave MMICs, in GaN and GaAs, sub-terahertz communications, and reliability and thermal characterization of MMICs. He has published over 100 journal and conference papers.

Target Audience

Designed for U.S. citizens working in the Department of War, Government, or Government-affiliated employees, industry, as well as college students and faculty. Must register with your organizational email, and will be notified of acceptance within one week of the course start date.

Course Details

January 13, 2026 – February 12, 2026

Tuesdays and Thursdays from 2:30 PM until 5:30 PM ET

Synchronous over Zoom

24 hours | 4 weeks | 3-hr lectures twice a week

There are no classes on January 20 and January 22.

Class sessions are held on January 13, 15, 27, 29, and February 3, 5, 10, and 12

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